Curr Appl Phys 2010, 10:S435.CrossRef 17. Kurokawa Y, Tomita S, Miyajima S, Yamada A, Konagai M: Observation of the photovoltaics effect from the solar cells using silicon quantum dots superlattice as a light absorption layer. In Proc 33rd IEEE Photovoltaic Specialists Conference. San Diego; 2008:211. 18. Yamada S, Kurokawa Y, Konagai

M: High thermostable ad conductive Selleckchem ITF2357 niobium doped titanium oxide for the application to a diffusion barrier layer of silicon check details quantum dot superlattice solar cell structure. In Proc 37th IEEE Photovoltaic Specialists Conference. Seattle; 2011:2113. 19. Yamada S, Kurokawa Y, Miyajima S, Konagai M: Improvement of electrical properties of silicon quantum dot superlattice solar cells with diffusion barrier layers. Jpn J Appl Phys 2013, 52:04CR02.CrossRef 20. Perez-Wurfl I, Ma L, Lin D, Hao X, Green MA, Conibeer G: Silicon nanocrystals in an oxide matrix for thin film solar cells with 492 mV open circuit voltage. Sol Energy Mater Sol Cells 2012, 100:65.CrossRef 21. Löper P, Canino M, Qazzazie D, Schnabel M, Allegrezza M, Summonte C, Glunz SW, Janz S, Zacharias M: Silicon nanocrystals embedded in silicon carbide: investigation of charge carrier transport

and recombination. Appl Phys Lett 2013, 102:033507.CrossRef 22. Van Wieringen A, Warmholtz N: On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures. Physica Selleck HDAC inhibitor 1956, 22:849.CrossRef 23. Schmidt H, Borchardt G, Geckle U, Bruns M, Baumann H: Comparative study of trap-limited hydrogen diffusion in amorphous SiC, Si 0.66 C 0.33 N 1.33 , and SiN 1.33 films. J Phys Condens Matter 2006, 18:5363.CrossRef 24. Robertson J: Defect densities and hydrogen diffusion in hydrogenated amorphous Si-based alloys. Appl Phys Lett 1991, 59:3425.CrossRef 25. Ishii N, Kumeda M, Shimizu T: A simple molecular orbital calculation of ESR g-values for amorphous Si 1-x C x , Si 1-x Ge x and Ge 1-x C x . Sol Stat Comm 1982, 41:143.CrossRef 26. Tsai CC,

Fritzsche H: Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated silicon. Sol Energy Mater diglyceride Sol Cells 1979, 1:29.CrossRef 27. Vasin AV, Kolesnik SP, Konchits AA, Kushnirenko VI, Lysenko VS, Nozarov AN, Rusavsky AV: Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment. J Appl Phys 2006, 99:113520.CrossRef 28. Street RA: Metastability and the hydrogen distribution in aSi:H. AIP Conf Proc 1991, 234:21.CrossRef 29. Shirai H, Hanna J, Shimizu I: Role of atomic hydrogen during growth of hydrogenated amorphous silicon in the “chemical annealing”. Jpn J Appl Phys 1991, 30:L679.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions SY carried out the experiments and the calculations. MK supervised the work and finalized the manuscript. YK and SM participated in the design of the study and helped to draft the manuscript.