The wavelength of an incident light was 904 nm, which is the same

The wavelength of an incident light was 904 nm, which is the same as the wavelength of the laser used in μ-PCD measurement. Moreover, Shockley-Read-Hall recombination, Auger recombination, and band-to-band recombination were taken into account, and the surface recombination was neglected for simplification. Figure 2 The schematic diagram of the calculation model. Table 1 Physical parameters for lifetime estimation based on our simple calculation model and PC1D Symbol Parameter Silicon nanowire Bulk silicon d, W Length,

thickness 10 μm 190 μm Ε Dielectric constant 11.4 11.4 Eg Energy gap (eV) 1.12 1.12 χ Electron affinity (eV) 4.05 4.05 Dt Trap level 0 0 τ e0, τ h0 Carrier lifetime 0.05 to 1.5 μs 1 ms μ e Electron selleck inhibitor mobility (cm2/(Vs)) 1,104 1,104 μ h Hole mobility (cm2/(Vs)) 424.6 424.6 N A Accepter concentration (cm−3) 1 × 1016 1 × 1016 Results and discussion The decay curve of SiNW HER2 inhibitor arrays fabricated

by MACES was successfully obtained from μ-PCD measurement, as shown in Figure 3a. From Figure 3b, we confirmed that the decay curve consisted of two components, which were fast-decay and slow-decay components. At present, the origin of the second slow-decay component is not clear. A possible explanation is FHPI cell line that the slow decay originates from minority carrier trapping effect at the defect states on the surface of the SiNW arrays. As a result of fitting to exponential attenuation function, the τ eff of the SiNW arrays on the Si wafers is found to be 1.6 μs. This low τ eff reflects the large surface recombination velocity at the surface of the SiNW arrays because we used high-quality crystalline silicon wafer as starting materials. check To improve τ eff, passivation films were deposited on the SiNW arrays. In the case

of the a-Si:H passivation film, τ eff was not improved since only a small part of the SiNW arrays was covered with the a-Si:H film. The a-Si:H thin film was deposited only on top of the SiNW array owing to the high density of SiNWs as shown in Figure 4. This reason can be explained according to the studies of Matsuda et al., in which they reported about the deposition of a-Si:Hon trench structure by PECVD [34, 35]. The concentration of precursors related with a silane gas decreased as their position on the SiNW moved farther from the plasma region, suggesting that the precursors could not reach the bottom of the SiNWs. That is why the a-Si:H thin film was deposited only on top of the SiNW array. In fact, the interspace between our fabricated SiNWs could not be embedded owing to the very narrow gap at around 20 nm. On the other hand, in the case of SiNW arrays covered with the as-deposited Al2O3 film, the τ eff increased to 5 μs. That is because the surface of the SiNW arrays was successfully covered with Al2O3. In Figure 5a, the cross-sectional SEM images of the SiNW array before and after the deposition of an Al2O3 passivation film are shown.

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